T38P1000F1000

Specifications

Specification Conditions Value
VRRM 1000 V
TC 65 °C
ΔI / ΔT 800 A / µS
I2T At 60Hz 415 kA2S
Vgt 3 V
Igt 150 mA
ΔV / ΔT At Tjmax 500 V / µS
TJMAX 125 °C
tQ At TJMAX 40 µS
IH 500 mA
Rø(JC) Both sides cooled. 0.04 °C / W
IT(AV) At TC (Case Temperature) 1000 A
ITSM At TJMAX 10000 A
VTM At On-State Current 2.9 V
ITM 2000 A
FM 3500 lbs
IRRM At TJMAX 35 mA

Notes

  • For specific QRR values, contract the factory.
  • Current ratings are RMS values.

Consúltenos

Diodo de disco Distronica