Z32RD911
Specifications
| Specification | Conditions | Value |
|---|---|---|
| VRMS | 550 V | |
| VDC | 745 V | |
| VN(DC) MIN | At 1 mA | 738 V |
| VN(DC) NOM | At 1 mA | 820 V |
| VN(DC) MAX | At 1 mA | 902 V |
| WMAX | At 2 ms | 620 J |
| VC | At IC | 1500 V |
| IC | 200 A | |
| IP | For 8 x 20 μs Pulse | 25000 A |
| IP | For 8 x 20 μs, Two Pulses | 20000 A |
| C | At 1 kHz | 950 pF |
| DMAX | 35 mm | |
| TMAX | 10.7 mm | |
| Y | 8.8 mm | |
| PD MAX | 1.2 W | |
| Op. Temp. | 55 to 125 °C | |
| Store Temp. | 55 to 125 °C |
Notes
- Device data taken at 25 °C.
- Typical response time is less than 15 nanoseconds.
